Abstract
Semiconductors that exhibit room-temperature ferromagnetism are central to the development of semiconductor spintronics. Transition metal (TM)-doped A IIB IVC V 2 are a promising class of such system. These ternary compound semiconductors have two metal sites A and B that can be substituted by the TMs. A site preference for TM incorporation is crucial for a possible explanation of ferromagnetism since dependent on the TM valent state holes or electrons can be released. For low Fe- and Cr-doped ZnGeP 2, our EPR investigations revealed in addition to the well-known native defects the presence of substitutional Fe 2+ (3d 6, S = 2 ) on Zn site, Fe 3+ (3d 5, S = 5 2 ) and Cr 4+ (3d 2, S = 1 ) on Ge site. A photo-induced recharging of Fe 2+ to Fe + is observed. The Cr 4+ center exhibits a well-resolved phosphorus ligand hyperfine splitting. For Fe 2+ and Fe 3+, the magnetic site inequivalence of each of the both Zn and Ge sites, respectively, has been detected. Moreover, anti-ferromagnetically coupled Mn 2+–Mn Zn 2+ pairs have been observed in Mn-doped ZnGeP 2.
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