Transition metal-doped ZnO diluted magnetic semiconductors tuned by high pulsed magnetic field

Abstract

Diluted magnetic semiconductors (DMSs), which refer to transition-metal (TM) ions partially substitute cations of the host semiconductor materials, have attracted considerable attention for potential applications in spin electronics and magnetic devices. Aiming in realizing practical spintronic devices, the most important is to develop DMSs with Curie temperature (T C ) exceeding room temperature. And the ferromagnetic properties are not from the second magnetic phase but as an intrinsic feature. In the quest for materials with a high T C , transition metal (TM)-doped ZnO has emerged as an attractive candidate according to theoretical studies and experimental results. ZnO is a wide band gap (Eg∼3.3 eV at 300 K) semiconductor with a large exciton binding energy (∼60 meV). Moreover, well-defined doping and defect chemistries, suitability for transparent high-power high-temperature application and the ability to lase or emit spontaneously at ultraviolet wavelengths combine to make ZnO more attractive in the research of diluted magnetic semiconductors [1].