Abstract
Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atEc-0.35 eV andEc-0.57 eV to the Pd-related defect atEc −0.22 eV is observed, and a Pd-Fe complex level atEc −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atEc-0.33 eV andEc-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atEv+0.32eV andEv+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atEv + 0.35 eV andEv+0.48 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
