Transition Metal Dichalcogenide WS2 Films Prepared with a Combination of Spin/Dip Coating and CVD

Abstract

Recently, transition metal dichalcogenides (TMDCs) with 2D structure have attracted interest due to their many unique optical and electrical properties. The primary preparation methods for 2D materials are chemical vapor deposition (CVD), exfoliation, and other vacuum technologies. Large-scale synthesis of WS2 via solution-process is rare due to the higher temperature needed for tungsten-based precursors. Combination of spin coating or dip coating with CVD have been studied recently to make large-area 2D TMDC with good electrical properties. Here, we report a new synthetic route for large WS2 crystal that combined solution coatings and CVD process. A solution of sodium tungstate and hydrazine hydrate with sodium thiosulphate was coated on a silicon wafer via dip and spin coating. The films were then treated with CVD at various positions and temperatures to facilitate crystallization. The double coating conditions and CVD parameters were modified to obtain WS2 crystals. Triangular shaped 44 ± 4 µm WS2 crystals could be obtained with simple annealing above 900oC without gas treatment. The synthesized WS2 was found to be bulk with a triangular shape, as confirmed by Raman and AFM analyses. A PL peak of WS2 at 643 nm was observed at an early crystallization stage.