Abstract
Al x Ga 1−x As–GaAs–In y Ga 1−y As quantum well heterostructure lasers with thin sharply defined cavities that operate longitudinally or vertically are demonstrated. Longitudinally, the cavity is defined by cleaving (edge emission) while vertical definition is provided by a lower AlxOy/GaAs distributed Bragg reflector (DBR) and an upper SiO2/Si DBR that form a resonant structure. A reverse-biased tunnel contact junction provides lateral electron current to support hole injection through a native-oxide-defined aperture. This ultrathin cavity configuration produces low threshold high efficiency (η∼91%, L=140 μm) edge emission (longitudinal operation) in the case of long lasers (L≳90 μm), and vertical emission for shorter lasers (L≲65 μm). The transition from longitudinal to vertical laser operation as a function of cavity length, L, is demonstrated.
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