Abstract
Transport measurements through metal-semiconductor carbon nanotube intramolecular junctions were carried out at high gate voltages in which regime the influence of Schottky barrier to charge transport is weak. The I-Vds curves exhibit an inflection point in the form of ln(I∕Vds2)−1∕Vds, showing a transition of transport mechanism from direct tunneling to field emission. The findings are interpreted in terms of quantum tunneling through a rectanglelike barrier at the junction, with a barrier width of ∼4nm, in good agreement with that observed on pentagon-heptagon defects at nanotube junctions via scanning tunneling spectroscopy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
