Abstract
With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole plasma in GaAs. The transition from ballistic to drift-like transport is strongly influenced by electron-hole scattering.
Highlights
In an electric field charge carriers in a semiconductor undergo ballistic transport, i.e., the acceleration is proportional to the field, in the absence of scattering
As is often the case, the most important scattering process is scattering with optical phonons, the relevant time scale is ≈100 fs, determined by the optical phonon frequency
We use the electric field of a strong THz pulse and determine its time dependence by electrooptic sampling [3]
Summary
In an electric field charge carriers in a semiconductor undergo ballistic transport, i.e., the acceleration is proportional to the field, in the absence of scattering. For times considerably longer than these scattering times, transport will be drift-like, i.e., the carrier velocity is proportional to the field. On intermediate time scales one expects a gradual transition from ballistic to drift-like transport.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
