Abstract
Structural changes in silicon films with variations of hydrogen dilution and substrate temperature have been studied. At a critical value of hydrogen dilution in silane ( φ) a sharp transition from amorphous to microcrystalline phase has been observed. An increase of substrate temperature from 170 to 340 °C shifts the transition point from φ=95.5% to 93.5%. The change in dark conductivity and absorption corroborate with the change in crystalline volume fraction in the films. The grain size varies from 45 to 360 Å depending on deposition conditions. Optical absorption and hydrogen content in the film decreases drastically with formation of microcrystalline structure. Silicon films developed at 340 °C show moderate photosensitivity together with low light induced degradation at low crystallinity, which might be suitable properties for solar cell application.
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