Transition density of states for Si(100) from L 1L 23V and L 23VV Auger spectra : J. E. Houston, G. Moore and M. G. Lagally. Solid St. Communs21, 879 (1977)

Abstract

In this work the effects of filling the surface energy states in AlGaAs/GaAs heterostructures on the depletion layer are reported. The depletion layer width was varied from 49 to 10 nm as determined by Raman spectroscopy, allowing to discern their effect on the generation of Franz-Keldysh oscillations observed by photoreflectance spectroscopy. It is found that the photoreflectance modulation process of built-in electric fields at surface is negligible when the surface-levels are filled. This work demonstrates the relationship between the surface-states density, the surface states capability of capture carriers and the layer sequence of the heterostructure. These parameters need to be considered in order to get an adequate analysis of the photoreflectance spectrum of heterostructures. It is shown that if a nearly full-filled condition in the available surface energy levels is established, the Franz-Keldysh oscillations produced by the modulation of the built-in electric field intensity disappears as a result of the reduction in the photogenerated carrier density in the photoreflectance measurement.