Abstract
The effect of electron-velocity overshoot in a p-type GaAs collector on the transit-time reduction of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) is investigated. A cutoff frequency improvement of about 30% over the conventional n-type GaAs collector was obtained in p-type collector HBTs for the same collector depletion-layer width. A significant increase in electron velocity in the p-type GaAs collector layer was confirmed by a simple analysis. >
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