Abstract
A solution to the photoconductive response of a high-field channel, such as that typified by a FET, is presented for the case of low-level generation. The theory of transit-time photoconductivity is extended to include arbitrary channel field, thickness, and carrier-density profiles, arbitrary carrier generation and injection conditions, carrier heating, and Poisson self-consistency. Several limiting cases are examined and the results are then applied to a Si MOSFET and a GaAs MESFET as two examples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
