Transit Time Enhanced Bandwidth in Nanostructured Terahertz Emitters

Abstract

Monte-Carlo simulations are used to show that the transit time in ∼100 nm gap photoconductive emitters of terahertz radiation is short enough to produce broad-bandwidth pulses. Furthermore, with these calculations we demonstrate that nanostructured contacts remove the need for low-temperature-grown or ion-implanted materials for broad-band terahertz devices.