Abstract
The development of the transistor is undoubtedly one of the most significant contributions in the field of electronic components. Many organizations have established extensive projects for the development of transistor circuits, and practical applications will certainly be reported in increasing numbers in the near future. In order to lay the foundation for transistor circuit development at the Stanford Research Institute, an internally-sponsored project was initiated in December 1951 for investigation of the characteristics of point-contact transistors. Some of the results of the work of that project are presented in this paper.
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