Abstract
A transimpedance amplifier has been designed and fabricated using an established GaAs MMIC (monolithic microwave integrated circuit) technology based on ion-implanted GaAs MESFETs with 0.5- mu m gate length, interdigital and overlay SiN capacitors, via holes, and mesa resistors. The amplifier exhibits a transimpedance gain of 71 dB Omega over the -3-dB bandwidth of DC 2 GHz, a very low equivalent input noise current density of less than 2 pA/ square root Hz, and a DC power consumption of 0.62 W. After a series of design iterations the state-of-the-art amplifier was uniquely unconditionally stable with a large tolerance to external bias conditions. >
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