Year-end Sale % OFF 
Abstract
Transient electronic transport properties of the bulk Ga0.47In0.53As and the two-dimensional electron gas (2DEG) at the Ga0.47In0.53 As/Al0.48In0.52As heterointerface for various electric fields are investigated by ensemble Monte Carlo simulations. The average electron velocity during transient transport in the 2DEG at the Ga0.47In0.53As/Al0.48In0.52As interface is about 8 times the steady-state velocity for E=20 kV/cm at room temperature and 30% higher than that in the intrinsic bulk Ga0.47In0.53As because of a higher peak velocity and a shorter transient time. This transient velocity enhancement in conjunction with higher 2DEG densities may significantly improve the performance of submicron-gate and even near-micron-gate Ga0.47In0.53As/Al0.48In0.52As high electron mobility transistors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
