Transient temperature profile in the gain medium of CW- and end-pumped passively Q-switched microchip laser

Abstract

The transient temperature profile in CW- and end-pumped passively Q-switched (PQS) microchip laser is investigated qualitatively by treating the population inversion (thereby the thermal load) as the sawtooth function of the time. The numerical results reveal not only the dynamics of thermal buildup, but also the dependence of the quasi-steady-state temperature rise and the repetitively oscillatory amplitude on the incident pump power and the pulse repetition rate of PQS laser. The abruptly ascending branch of the repetitive temperature oscillation is synchronized with the pulsing stage of PQS laser. As the result, the abrupt temperature transition during the pulsing stage would introduce the fluctuation into the PQS pulse parameters (pulse energy, pulse width, and peak power) via temperature-dependent stimulated emission and thermal lensing effect.