Abstract
Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 μs are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7×10−17 cm−2. The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics.
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