Abstract
ABSTRACTWe have developed a numerical simulation program (MANIFEST) which calculates the time-dependent behaviour of one and two dimensional amorphous silicon devices. Our model solves the complete set of transport equations for both electrons and holes and fully includes the appropriate time dependent occupation functions for the traps in the band gap of the amorphous silicon. These traps are assumed to obey Shockiey-Read-Hall kinetics. We have simulated the transient behaviour of pin and nin diodes, both in the dark and under illumination, as well as the characteristics of thin film transistors. Our initial results are in good agreement with experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
