Abstract
We report the characteristics of a p-n heterojunction diode comprised of a poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) as the hole-conducting p-type polymer and n-type ZnO nanowall networks. ZnO nanowall networks were synthesized on a GaN/sapphire substrate without metal catalyst using hot-wall type metal organic chemical vapor deposition. The p-n heterojunction diodes of PEDOT:PSS/ZnO nanowall exhibited a space charge limited current phenomena at forward bias and a transient reverse current recovery when a sudden reverse bias was applied from the forward bias condition. The minority carrier lifetime was estimated to be ∼2.5 μs.
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