Abstract
The transient photocurrent response measured on a-Si:H layers and solar cells after step-like switch-on of illumination reveals a variety of structures. By changing experimental parameters, e.g. sample temperature, irradiance, preceding dark time interval, under some conditions only a current deficiency (retarded approach to steady state photoconductivity) is observed. This effect is associated with a relatively slow filling of former empty traps. Other conditions lead to overshoot phenomena in the transients. Model calculations show that the dangling bond (DB) states have to be charged significantly before recombination by charged DBs becomes dominant. If effective recombination occurs relatively late compared to the trap filling process, an overshoot over the steady state value is expected. Generation of additional recombination centers by light soaking should therefore influence the overshoot strength and its transient appearance. This is confirmed by transient measurements on degraded samples.
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