Abstract
The single-event effects response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) is measured for MeV and GeV heavy-ion irradiation. These measurements reveal significant charge enhancement and very slow, microsecond-timescale relaxation times for the GaAs and InAlAs/InGaAs devices, with a much faster recovery from the ionizing event observed for the AlSb/InAs HEMTs.
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