Abstract
AbstractTransient response of hot electrons in quantum well wires of a polar semiconductor to a step electric field is studied using the displaced‐Maxwellian distribution function and the energy and momentum balance conditions. Numerical results are given for the variation of drift velocity and electron temperature with time for parameters characteristic of GaAs. Momentum relaxation is found to be faster than the energy relaxation. Also, both the relaxation rates are found to increase with the increase of lattice temperature and become faster with the decrease of transverse dimension of the wire.
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