Abstract
The transient response characteristics of HgCdTe photoconductive detector under the radiation of ultra-short laser pulse have been discussed in detail. Specifically, the transient effect of pulse width to the temperature of electronics and crystal lattice, and corresponding resistance changes of detector are mainly discussed. Based on traditional drift-diffusion model, considering that the temperature of electronics and crystal lattice are different under the ultra-short laser pulse, the double-temperature equation is joined to describe the semiconductor carriers’ dynamics features. Using the numerical method, the transient response characteristics of detector in the case of ultra-short pulse have been worked out. The calculation results show that: When the pulse width is greater than nanosecond pulse, the temperature of electronics will be equal to which of crystal lattice. If the pulse width is less than nanosecond pulse, the temperature of electronics is higher than which of the latter. After the end of a pulse, the rebound resistance of detector will be higher than the dark resistance because of the thermal effect. The heat effect is more obvious when a pulse with narrower width and higher energy density incident to the detector.
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