Abstract
Transient radiation effects following 20-60 ns electron pulses were measured in GaAs FETs and ICs operating at X-band. Long-term transients in RF output power and drain current were observed in all devices and ICs except FETs fabricated with a buried p-layer. Only the prompt (20 ns) photocurrent response was observed in FETs with a buried p-layer. The long-term transients are explained by a model of substrate trapping and backgating.
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