Transient pulse propagation and pulse break-up phenomena in III–V semiconductors

Abstract

The coherent radition-semiconductor interaction model based upon the time-dependent perturbation technique has been employed for the analytical study of transient pulse propagation and pulse break-up in directgap semiconductors. In order to check the validity of our model, we have applied our analysis initially to the Rubidium atomic vapor system duly irradiated with pulsed ruby laser. Numerical estimation of the change in transient transmitted intensity reveals good agreement between the present results and the experimental observations in Rb vapor system. Finally, we have analyzed pulse propagation in an important direct-gap crystal, namely InSb duly irradiated by ultrafast infrared dye laser operating in the 3.9-9.4 μm wavelength range. Pulse break-up and pulse peak shifts can be noticed from the results. The pulse velocity is also found to reduce by at least a factor of 100. These features are analogous to the phenomenon of self-induced transparency where the pulse area theorem is usually employed.