Transient process in an injection laser with a non-quasi-Fermi electron distribution function

Abstract

A calculation is made of the reaction of a semiconductor laser to rapid changes in the injection current. An allowance is made for deviations of the nonequilibrium carrier distribution function from the quasi-Fermi form when these deviations are characterized by an effective relaxation time τeff governed by the rates of intraband relaxation and polarization decay. It is shown that for typical parameters of a heterojunction laser the nature of its transient characteristic changes radically (from deep relaxation pulsations to a practically instantaneous repetition of the changes in the injection current) when τeff increases from 10−13 to 10−12 sec.