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Abstract
The results of an experimental and theoretical study of the transient photovoltaic response of diffused-junction silicon photodiodes are presented. The analysis pertains to a thin p-type layer diffused in an n-type wafer illuminated on the p-type surface. According to an exact solution for the transient response of the photocurrent at the junction, the rise time is limited by minority-carrier storage. Expressions for the external photovoltage rise and fall times indicate that in general the rise time at room temperature with no external bias depends on the light intensity as well as the load resistance, while the fall time depends only on the load resistance. Previous attempts by others to show experimental agreement with theory have not been completely satisfactory. Some experimental difficulties have been overcome by using an extremely fast light chopper. Rise and fall time measurements made on a silicon photodiode (TI Type LS 222) are in very good agreement with analysis. Impedance measurements which are important in showing the effect of load resistance on rise time are also discussed.
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