Abstract
ABSTRACTCo on AlGaN is expected to form a large barrier Schottky contact due to its high work function. We have used this material combination with 18 % of Al in AlxGaN for the study of transient photoresponse in the photovoltaic mode and in secondary photocurrent measurements after pulsed laser excitation. In reverse bias and in short- circuit mode a fast decay with a characteristic time of a few microseconds is dominant at room temperature. This mode is appropriate for UV detector operation. At elevated temperature, a much slower tail extending to several milliseconds is also observed. In forward bias operation the slow tail is dominating at any temperature. We discuss this asymmetry with respect to fast minority carrier collection within the space charge region for primary photocurrents and the slower majority carrier transport in forward bias.
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