Transient photoluminescence measurements on GaAs and AlGaAs double heterostructures

Abstract

The authors report a set of transient photoluminescence (TPL) measurements of GaAs and AlGaAs double heterostructure (DH) materials for solar cells as a function of temperature from 10 K to 300 K. They also report measurements of the time-integrated photoluminescence spectra of these samples. The authors observe, in both the spectra and the TPL measurements, evidence that the low temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature. >