Abstract
Photoluminescence decay in low-doped lattice-matched GaInAs/InP multiple quantum wells has been studied over a range of excess carrier densities. High carrier densities, which moved the Fermi level up to the top of the wells, could be created without focusing the laser beam. Radiative band-to-band recombination was shown to dominate up to excess carrier densities of 2.5*1012 cm-2 per well. A kinetic radiative recombination model which included free carriers, excitons and photon recycling was used to fit the transient decays in the regime in which the electrons were non-degenerate. At carrier densities greater than 2.5*1012 cm-2 per well, when both electrons and holes were degenerate, the recombination was predominantly non-radiative. An Auger coefficient of 4.0*10-29 cm6 s-1 was estimated for 5 nm quantum wells. No stimulated recombination was detected.
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