Abstract
The photoinjection of electrons from a sensitizing layer of amorphous selenium into thin films of trinitrofluorenone (TNF) has been studied using the xerographic discharge technique. Discharge curves were observed for both the amorphous and crystalline state of TNF. Large changes in discharge characteristics observed for the two states of the material are correlated with changes in electron transport. The effective mobility determined from the xerographic measurements for the amorphous TNF structure is field dependent and has a value of 6×10−5 cm2/V sec at 4×105 V/cm. This value is consistent with those obtained using the conventional time-of-flight measurement technique. A lower limit of electron mobility in polycrystalline TNF may be inferred from these measurements.
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