Abstract
ABSTRACTThe characteristics of a-Si:H based switches, as used in liquid crystal displays, degrade as a result of current injection. To assess this degradation we investigated the effects of current injection on the electron mobility, lifetime and the built-in electric field profile in a-Si:H Schottky diodes.We present steady-state current-voltage and transient photocurrent (TP) measurements on Mo and Pd a-Si:H Schottky diodes. The mobility, lifetime and electric field profile were determined from TP measurements. The electric field profile was calculated by fitting simulations from a non-linear model of the measurement to the measured TP currents.The electron drift mobility is not affected by current stressing, the electron lifetime reduces slightly, the built-in voltage decreases significantly. The widths of the built-in fields of Schottky and ohmic back contact are reduced with approximately the same factor, corresponding with a spatially homogeneous increase of the defect density.
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