Abstract
The characteristics of transient photocurrent in amorphous heterostructures Al-As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66–Al in the case of the positive polarity of the applied voltage at the top illuminated Al electrode are presented and discussed in this paper. The complex structure of the spectral distribution of the stationary (Fig. 1) and the transient (Fig. 3) photocurrent characteristics can be assigned to the different values of the optical band gap Eg of the involved amorphous layers (about Eg ~ 2.0 eV for As0.40S0.30Se0.30 and Ge0.09As0.09Se0.82; about Eg ~ 3.0 eV for Ge0.30As0.04S0.66). It is found that the dependence of photocurrent on light intensity has a power-law behavior Ipc ~ Fα(1.0 ≤ α ≤ 0.5), which is characteristic of amorphous semiconductors with an exponential distribution of localized states in the band gap.
Highlights
IntroductionTernary glasses As–S–Se, Ge–As–Se, and Ge–As–S attract attention due to their wide potential application in IR optics, non-linear optics, photonics, and optoelectronics and as Moldavian Journal of the Physical Sciences, Vol 20, 2, 2021 registration media for holography [1–3] and e-beam lithography [4–6]
It has been found that the predominant mechanisms of recombination of photo-excited carriers in the studied amorphous materials are mono- and bimolecular and the transport is controlled by the multiple trapping processes with an exponential distribution of the localized states in the band gap [12–14]
The steady-state photoconductivity spectra of all the amorphous thin film structures were registered at an external electric field of E = 5 104 V/cm2; e.g., I–V characteristics exhibiting an appropriate linear behavior were recorded in the region [10]
Summary
Ternary glasses As–S–Se, Ge–As–Se, and Ge–As–S attract attention due to their wide potential application in IR optics, non-linear optics, photonics, and optoelectronics and as Moldavian Journal of the Physical Sciences, Vol 20, 2, 2021 registration media for holography [1–3] and e-beam lithography [4–6]. The photocurrent spectra and the kinetics of the photocurrent can give information regarding the mechanisms of generation, recombination and drift processes of non-equilibrium carriers in amorphous materials. From this point of view, studies of the stationary and transient characteristics of photoconductivity of ternary amorphous thin films and multilayer structures (heterostructures) can give additional information about these processes and can present a special interest. It has been found that the predominant mechanisms of recombination of photo-excited carriers in the studied amorphous materials are mono- and bimolecular and the transport is controlled by the multiple trapping processes with an exponential distribution of the localized states in the band gap [12–14]
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