Abstract
Picosecond N2 lasers characterized with ultra-short pulse-width, high peak power, and simple detection installation are found very useful in diagnosing carrier behaviors of amorphous semiconductors which have low-drift mobility and a short lifetime. An impedance-matched sample holder and a fast rise-time preamplifier designed in this work provide this system with a high immunity to the background noise during the N2 laser discharge.
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Schedule a callMore From: IEEE Transactions on Instrumentation and Measurement
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