Abstract
The time-dependent gas phase kinetics in plasma-enhanced chemical vapor deposition (PECVD) processes has been studied. The temporal evolutions of the gas phase species, concentration and plasma parameters are measured in hydrogen-diluted silane plasmas, using plasma diagnostic techniques including mass spectrometry, optical emission spectroscopy, and probe and laser light scattering techniques. It is identified that gas phase kinetics such as electron collisions, chemical reactions, and particle transport play important roles in the transient phenomena of thin-film silicon PECVD processes. The characteristic times of the gas decomposition and depletion, diffusive transport, and nanoparticle growth and drift are discussed.
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