Abstract
The electrical time response of ion sensitive field effect transistors to an applied step change in bias voltage is examined. The results show that ISFET time response is determined by tne ion selective membrane and the conditions at the associated interfaces. Lateral charge distribution at the membrane/ insulator interface and its effect on time response is discussed. An understanding of the transient characteristics of ISFETs is advantageous in designing systems where bias voltages are switched, i.e., multiplexing and telemetry.
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