Abstract
Transient-mode liquid epitaxy (TMLE), where a cooler substrate is inserted into a hotter solution, has been used to grow layers on substrates which are mismatched ± 3,7%, Both AlGaAs on GaP and GaAs on InP have been sucessfully deposited. An improved surface morphology is observed in both cases when this technique is employed and is shown by IR transmission and x-ray topography to be caused by a very fine uniformly dispersed initial nucleation, A model for growth in this mode which assumes a diffusion-limited process is derived and is seen to agree well with GaAs experimental data originally presented by Deitch.
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