Abstract
The optoelectronic properties of a-Si:H films grown at different substrate temperatures between 30°C and 250°C were evaluated in-situ by contactless Time Resolved Microwave Conductivity (TRMC) measurements. The transient photoconductivity induced by 532nm laser pulses during the growth of multilayer systems composed of a-Si:H layers deposited at different temperatures made a direct comparison of these films possible. The maximum height of the TRMC signal was observed to decrease strongly with decreasing deposition temperature. Additionally, the annealing of layers deposited at low temperatures was studied by TRMC, stationary photoconductivity, IR and ESR measurements. Whereas a considerable increase of the photoconductivity and the TRMC signal and a decrease in the spin density was observed during annealing at 250°C, the IR transmission spectra remained unchanged.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
