Abstract
A transient lateral photovoltaic effect (LPVE) has been observed in p-La0.7Sr0.3MnO3∕n-Si heterojunctions. Under the nonuniform irradiation of a pulsed laser, the LPVE shows high sensitivity to the spot position on the La0.7Sr0.3MnO3 surface. A mechanism based on the well established model for the LPVE in conventional semiconductors has been applied to explain the LPVE in the heteroepitaxial junctions of perovskite-type metal oxides. The large LPVE in the heteroepitaxial junctions is expected to make the perovskite-type metal oxide a new and faster candidate for position-sensitive photodetectors.
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