Abstract
The well known transient ion drift (TID) method is used to quantify the density of mobile Cu interstitial ions in polycrystalline CdTe PV cells. Average Cui + ion densities in optimally processed cells are 20% of the background ionized acceptor doping level. A preliminary estimate of the diffusion coefficient for Cu i + ions in the polycrystalline CdTe absorber is D(Cui)=1.3E-6 [cm2/sec] times exp[-0.29 eV/(KB*T)] in the temperature range of 25degC to 55degC from TID measurements. Aspects of the TID method as pertains to practical thin film polycrystalline devices are discussed
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