Abstract
A double pulse spin-flip laser technique has been used to evaluate the InSb conduction electron spin-relaxation time T 1; a value of 60 ± 20 nsec ( n = 1.2 × 10 16 cm −3, H = 60 kG, T = 20 K)is obtained. The effects of electron heating by free carrier absorption are measured and an energy relaxation time of 20–40 nsec is obtained. A calculation of T 1 based on ionized impurity scattering in the quantum limit regime is in order of magnitude agreement with the experiment.
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