Abstract
Transient hole transport of amorphous arsenic triselenide has been investigated with the standard time-of-flight technique near its glass-transition temperature. It is found that as the sample temperature is elevated from room temperature, the drift mobility sharply decreases by about one order of magnitude at 370K, and that the transit-time dispersion has a maximum value at that temperature. These phenomena are tentatively interpreted in terms of the thermal generation of discrete localized states.
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