Transient electron beam annealing of arsenic implanted silicon

Abstract

Single crystal silicon, doped by implantation of arsenic ions (maximum concentrations between 3 X 10 20 and 5 X 10 20 cm −3) was annealed by irradiation with a raster scanned electron beam at power density of about 100 W cm −2. Arsenic redistribution and substitutionality were studied by Rutherford backscattering and channelling techniques. Sheet resistance was measured by a four-point probe. Using thermal cycles lasting about 1s, full activation with little dopant movement was observed for the higher energy implants while the best result for the 5 keV implants was 90% substitutionality.