Abstract
This study introduces an effective and efficient dynamic electro-thermal coupling analysis (ETCA) approach to explore the electro-thermal behavior of a three-phase power metal–oxide–semiconductor field-effect transistor (MOSFET) inverter for brushless direct current motor drive under natural and forced convection during a six-step operation. This coupling analysis integrates three-dimensional electromagnetic simulation for parasitic parameter extraction, simplified equivalent circuit simulation for power loss calculation, and a compact Foster thermal network model for junction temperature prediction, constructed through parametric transient computational fluid dynamics (CFD) thermal analysis. In the proposed ETCA approach, the interactions between the junction temperature and the power losses (conduction and switching losses) and between the parasitics and the switching transients and power losses are all accounted for. The proposed Foster thermal network model and ETCA approach are validated with the CFD thermal analysis and the standard ETCA approach, respectively. The analysis results demonstrate how the proposed models can be used as an effective and efficient means of analysis to characterize the system-level electro-thermal performance of a three-phase bridge inverter.
Highlights
In contrast to insulated-gate bipolar transistors (IGBTs), metal–oxide– semiconductor field-effect transistor (MOSFET) comprise a number of advantageous features, such as a higher switching frequency and lower switching loss; they have been used in a wide range of industrial applications, such as converters and inverters
This study proposes moreproposes effective aand efficient dynamic approach, in which a simplified equivalentmodel circuit simulationand model approach, in which a simplified equivalent circuit simulation is developed fullyis developed and fully coupled a Foster thermal network model to of account for the effect coupled with a Foster thermal with network model to account for the effect the instantaneous of the instantaneous junction temperaturepower on thelosses instantaneous power losses
The parasitic inductances of the power MOSFET module extracted from the preceding inductive double-pulse test (DPT) circuit simulation at the working frequency of 20 kHz were 8.60, 5.47, and 7.53 nH and were associated with the gate, drain, and source terminals
Summary
Power semiconductors/modules inside inverters are the most crucial devices controlling the power conversion efficiency. In response to the urgent need for high-performance power conversion applications, the power semiconductor industry has recently seen rapid technological developments, such as insulated-gate bipolar transistors (IGBTs) [1,2], metal-oxide semiconductor field effect transistors (MOSFETs) [3,4], and even wide bandgap (WBG) silicon carbide (SiC) [5,6] and gallium nitride (GaN) power devices [7]. In contrast to IGBTs, MOSFETs comprise a number of advantageous features, such as a higher switching frequency and lower switching loss; they have been used in a wide range of industrial applications, such as converters and inverters
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