Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors.

Tomas Ceponis,Vytautas Rumbauskas,Stanislau Lastovskii,Leonid Makarenko,Jevgenij Pavlov,Eugenijus Gaubas,Laimonas Deveikis,Kornelijus Pukas

doi:10.3390/s20236884

Tomas Ceponis, Vytautas Rumbauskas + Show 6 more

Open Access

https://doi.org/10.3390/s20236884

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Abstract

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure.

Highlights

IntroductionSiGe material based devices are capable to operate in the radiation harsh environment [1,2,3,4]
SiGe material based devices are capable to operate in the radiation harsh environment [1,2,3,4].It had been demonstrated [5,6] that SiGe alloys are prospective for fabrication of γ-ray detectors.it has been determined that the Si1−x Gex single crystals can only be obtained for alloys containing either 0.9 < x < 1 or 0 < x < 0.15 of Ge
These characteristics have been recorded in diodes made of SiGe alloys with different Ge content and compared with those obtained for Si of the same p-type conductivity and doping level

Summary

Introduction

SiGe material based devices are capable to operate in the radiation harsh environment [1,2,3,4] It had been demonstrated [5,6] that SiGe alloys are prospective for fabrication of γ-ray detectors. The carrier trapping is associated with the single-type carrier emission centers. Capture of the single type carriers to these centers proceeds simultaneously with carrier annihilation, while subsequent thermal emission from these centers delays recombination process. Recombination characteristics of irradiated materials specifies the evolution of radiation defect introduction, their types and densities [19,20]. It has been revealed that both carrier recombination and trapping lifetimes decrease near-reciprocally to density of radiation defects acting as carrier capture and thermal emission centers, with predominance of point radiation defects. Ge can be used as an isovalent impurity, instead of carbon, within engineering of the strong field layers in advanced low gain avalanche detectors made of Si

Samples and Experimental Techniques

MeV Electron

Parameters Extracted from Transient Electrical and Optical Characteristics

Findings

Summary