Abstract
In the non-Ohmic regime of NbSe 3, the transient conductivity under pulsed field and the conduction noise under dc bias were investigated. The results under pulsed-field with two steps show the number of carriers (CDWs) causing the extra conductivity is field independent. The noise spectrum of the crystal on which the pulsed experiment was carried out has only one fundamental narrow band noise and exhibits no enhancement of the noise level. It is concluded for this crystal that the CDW slides uniformly over the whole crystal. It is also confirmed from measurements under two successive pulsed field that the configuration of the CDW changes as it begins to slide.
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