Abstract
We found that a transient component exists in the pn junction leakage current formed in Czochralski (CZ) silicon wafers. This transient component is found to be an area effect by measuring the area dependence of the leakage current; this can only be observed after a hole injection occurs by applying the appropriate bias to the junction. Furthermore, this component is not observed in epitaxial, float-zone, or magnetic-field-applied Czochralski wafers that have low oxygen concentrations. From the analysis of the time dependence of the current, we concluded that the transient component observed in CZ silicon is hole emission current from oxygen-related hole traps that have an exponential trap distribution.
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