Abstract
Transient characteristics of the InGaP–GaAs–InGaAs (quantum well)-GaAs transistor laser are studied. Rate equations are numerically solved to obtain the response of current density and photon density. Expression of resonance frequency \(f_{r}\) is obtained by solving the rate equations analytically. It has been found that the \(f_{r}\) increases with decreasing spontaneous carrier lifetime and with increasing value of the bias current density.
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