Abstract
Theoretical transient characteristics of hybrid Schottky injection FETs (HSINFETs) are considered. The theoretical analysis is based on two-dimensional numerical simulations, in which the entire turn-off process and the effects of minority-carrier injection levels on the transient performance of the HSINFET device are analyzed. The analysis shows that the fast turn-off speed in the HSINFET device occurs because (1) only a small number of minority carriers is injected into the drift region, (2) a current path, provided by the Schottky contact, effectively removes electrons from the drift region during turn-off, and (3) Schottky clamping at the anode is effective during turn-off and prevents the p/sup +/ portion of the hybrid anode from significantly injecting holes. Experimental results compared the DC and transient performance of the lateral double-diffused MOS transistor (LDMOST), lateral insulated-gate transistor (LIGT), Schottky injection field-effect (SINFET), and HSINFET are presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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