Abstract
Transient switch-on and switch-off characteristics of 4H-SiC npn BJT'shave been studied in the temperature range 180-500 K.Both in common-base and in common-emitter configurations thetransistor switch-on times are governed by respective RC time constants.The switch-off processes are strongly affected by surface recombination.The role of the emitter current crowding effect has been discussed.The surface recombination velocity is estimated to be about 104 cm s-1.
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